Datasheet S-LP3407LT1G Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	S-LP3407LT1G	P-Channel Enhancement-Mode MOSFET LESHAN RADIO COMPANY, LTD. 30V P-Channel Enhancement-Mode MOSFET VDS I D (V GS = -10V) RDS(ON) (VGS = -10V) RDS(ON) (VGS = -4.5V) -30V -4.1A < 70mΩ < 100m Ω FEATURES The LP3407LT1G uses advanced trench technology to provide excellent RDS(ON) with low gate charge. This device is suitable for	LRC

S-LP3407L Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
S-LP3407LT1G	P-Channel Enhancement-Mode MOSFET LESHAN RADIO COMPANY, LTD. 30V P-Channel Enhancement-Mode MOSFET VDS I D (V GS = -10V) RDS(ON) (VGS = -10V) RDS(ON) (VGS = -4.5V) -30V -4.1A < 70mΩ < 100m Ω FEATURES The LP3407LT1G uses advanced trench technology to provide excellent RDS(ON) with low gate charge. This dev	LRC

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Número de pieza	Descripción	Fabricantes	PDF
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