LESHAN RADIO COMPANY, LTD.
8V P-Channel Enhancement-Mode MOSFET
VDS= -8V RDS(ON),
[email protected], Ids@"3.5A = 68 mΩ RDS(ON),
[email protected], Ids@"3A = 81 mΩ RDS(ON),
[email protected], Ids@"2A = 118 mΩ
Features
Advanced trench process technology High Density Cell Design For