LESHAN RADIO COMPANY, LTD.
30V N-Channel Enhancement-Mode MOSFET
VDS= 30V RDS(ON), Vgs@10V, Ids@6 A = 38mΩ RDS(ON),
[email protected], Ids@5A = 52mΩ
Features
Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance High Power and C