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Avalanche Diodes with built-in Thyristor VZ (V) 27 to 33 34 to 40 50 to 60 60 to 70 90 to 110 115 to 135 140 to 160 125 150 to 165 165 to 185 185 to 215 220 to 250 235 to 265 138.7 150 180 179.5 190 VRDC (V) (–10°C) 20 28 40 50 80 105 125 Part Number ITSM (A) 50Hz Half-cycle Sinewave Single Shot
DISCRETE SEMICONDUCTORS DATA SHEET alfpage M3D034 RZ1214B65Y NPN microwave power transistor Product specification Supersedes data of 1997 Feb 18 1999 Dec 24 Philips Semiconductors Product specification NPN microwave power transistor FEATURES • Interdigitated structure provides high emitter
Avalanche Diodes with built-in Thyristor Absolute Maximum Ratings Parameter Type No. VRDC (V) (–10ºC) ITSM (A) 50Hz Half-cycle Sinewave Single Shot Electrical Characteristics (Ta = 25°C) Tstg (°C) VZ (V) IR (µA) VR = VRM max IR (H) (µA) VR = VRM Ta =100°C max Others Tj (°C) (typ.) Mass
Avalanche Diodes with built-in Thyristor Absolute Maximum Ratings Parameter Type No. VRDC (V) (–10ºC) ITSM (A) 50Hz Half-cycle Sinewave Single Shot Electrical Characteristics (Ta = 25°C) Tstg (°C) VZ (V) IR (µA) VR = VRM max IR (H) (µA) VR = VRM Ta =100°C max Others Tj (°C) (typ.) Mass
Features - Input voltage: 3.6V to 20V. - Output voltage: 0.8V to VCC. - Duty ratio: 0% to 100% PWM control - Oscillation frequency: 300KHz typ. - Soft-start, Current Limit, Enable function - Thermal Shutdown function - Built-in internal SW P-channel MOS - SOP8 Pb-Free Package. Applications - PC Moth
Avalanche Diodes with built-in Thyristor Absolute Maximum Ratings Parameter Type No. VRDC (V) (–10ºC) ITSM (A) 50Hz Half-cycle Sinewave Single Shot Electrical Characteristics (Ta = 25°C) Tstg (°C) VZ (V) IR (µA) VR = VRM max IR (H) (µA) VR = VRM Ta =100°C max Others Tj (°C) (typ.) Mass
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