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Datasheet RZ12 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 5 | RZ12 | Diode (spec sheet) |
 American Microsemiconductor |
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| 4 | RZ1200 | Avalanche Diodes with built-in Thyristor Avalanche Diodes with built-in Thyristor
Absolute Maximum Ratings Parameter Type No. VRDC (V) (–10ºC) ITSM (A)
50Hz Half-cycle Sinewave Single Shot
Electrical Characteristics (Ta = 25°C) Tstg (°C) VZ (V) IR (µA) VR = VRM max IR (H) (µA) VR = VRM Ta =100°C max
Others
Tj (°C)
(typ.)
Mass |
 Sanken electric |
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| 3 | RZ1214B35Y | NPN microwave power transistor DISCRETE SEMICONDUCTORS
DATA SHEET
RZ1214B35Y NPN microwave power transistor
Product specification Supersedes data of June 1992 1997 Feb 18
Philips Semiconductors
Product specification
NPN microwave power transistor
FEATURES • Interdigitated structure provides high emitter efficiency • Di |
 NXP Semiconductors |
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| 2 | RZ1214B65Y | NPN microwave power transistor DISCRETE SEMICONDUCTORS
DATA SHEET
alfpage
M3D034
RZ1214B65Y NPN microwave power transistor
Product specification Supersedes data of 1997 Feb 18 1999 Dec 24
Philips Semiconductors
Product specification
NPN microwave power transistor
FEATURES • Interdigitated structure provides high emitter |
NXP Semiconductors |
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| Número de pieza | Descripción | Fabricantes | |
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