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Datasheet RU55200Q Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | RU55200Q | N-Channel Advanced Power MOSFET RU55200Q
N-Channel Advanced Power MOSFET
Features
• 55V/200A,
RDS (ON) =3.3mΩ(Typ.)@VGS=10V
• Ultra Low On-Resistance • Fast Switching and Fully Avalanche Rated • 100% avalanche tested • 175°C Operating Temperature • Lead Free and Green Devices Available (RoHS Compliant)
Applications
|  Ruichips | mosfet |
RU5 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | RU55110R | N-Channel Advanced Power MOSFET RU55110R
N-Channel Advanced Power MOSFET
MOSFET
Features
• 55V/110A, RDS (ON) =5mΩ(tpy.)@VGS=10V
• Super High Dense Cell Design
• Ultra Low On-Resistance
• 100% avalanche tested
• Lead Free and Green Devices Available (RoHS Compliant)
Pin Description
TO-220
Applications
• DC-DC Conve Ruichips mosfet | | |
| 2 | RU55111R | N-Channel Advanced Power MOSFET RU55111R
N-Channel Advanced Power MOSFET
MOSFET
Features
• 55V/110A, RDS (ON) =5mΩ(tpy.)@VGS=10V RDS (ON) =7mΩ(tpy.)@VGS=4.5V
• Super High Dense Cell Design
• Ultra Low On-Resistance
• 100% avalanche tested
• Lead Free and Green Devices Available (RoHS Compliant)
Applications
• DC-DC Ruichips mosfet | | |
| 3 | RU55200Q | N-Channel Advanced Power MOSFET RU55200Q
N-Channel Advanced Power MOSFET
Features
• 55V/200A,
RDS (ON) =3.3mΩ(Typ.)@VGS=10V
• Ultra Low On-Resistance • Fast Switching and Fully Avalanche Rated • 100% avalanche tested • 175°C Operating Temperature • Lead Free and Green Devices Available (RoHS Compliant)
Applications
Ruichips mosfet | | |
| 4 | RU55L18L | P-Channel Advanced Power MOSFET RU55L18L
P-Channel Advanced Power MOSFET
MOSFET
Features
• -60V/-16A, RDS (ON) =100mΩ(tpy.)@VGS=-10V RDS (ON) =125mΩ(tpy.)@VGS=-4.5V
• Super High Dense Cell Design
• ESD protected
• Reliable and Rugged
• 100% avalanche tested
• Lead Free and Green Devices Available (RoHS Compliant)
Ap Ruichips mosfet | | |
| 5 | RU55L18R | P-Channel Advanced Power MOSFET RU55L18R
P-Channel Advanced Power MOSFET
MOSFET
Features
• -60V/-16A, RDS (ON) =100mΩ(Typ.)@VGS=-10V RDS (ON) =125mΩ(Typ.)@VGS=-4.5V
• Super High Dense Cell Design
• ESD protected
• Reliable and Rugged
• 100% avalanche tested
• Lead Free and Green Devices Available (RoHS Compliant)
Ap Ruichips mosfet | | |
| 6 | RU5620A | Digitally Programmable Universal Active Filter EG&G filter | | |
| 7 | RU5H11P | N-Channel Advanced Power MOSFET Features
• 500V/11.5A, RDS (ON) =0.55Ω (Typ.) @ VGS=10V
• Gate Charge Minimized • Low Crss • Extremely High dv/dt Capability • 100% Avalanche Tested • Lead Free and Green Available
RU5H11P
N-Channel Advanced Power MOSFET
MOSFET
Pin Description
TO-220 TO-263
TO-220F TO-247
Applicati Ruichips mosfet | |
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