RQK0605JGDQA
Renesas
Silicon N-Channel MOS FETRQK0605JGDQA
Silicon N Channel MOS FET Power Switching
Features
Low on-resistance RDS(on) = 82 m typ (VGS = 10 V, ID = 1.5 A)
Low drive current High speed switching 4.5 V gate drive
Outline
RENESAS Package code: PLSP0003ZB-A (Package name: M