RQK0201QGDQA
Renesas
Silicon N-Channel MOS FETRQK0201QGDQA
Silicon N Channel MOS FET Power Switching
Features
• Low on-resistance RDS(on) = 25 mΩ typ (VGS = 4.5 V, ID = 2.4 A)
• Low drive current • High speed switching • 2.5 V gate drive
Outline
RENESAS Package code: PLSP0003ZB-A (Package name: M