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RN142ZS8A Diodes PIN Diode RN142ZS8A z Applications High frequency switching z Dimensions (Unit : mm) 㪈㪅㪍㫧㪇㪅㪇㪌 㪇㪅㪊㫧㪇㪅㪇㪊 z Land size figure (Unit : mm) 㪇㪅㪋 㪇㪅㪊 㪇㪅㪉㪊㫧㪇㪅㪇㪊 㪇㪅㪌㫧㪇㪅㪇㪊 z Features 1) Ultr
RN142ZS12A Diodes PIN Diode RN142ZS12A z Applications High frequency switching z Dimensions (Unit : mm) 㪉㪅㪋㫧㪇㪅㪇㪌 㪇㪅㪊㫧㪇㪅㪇㪊 㪇㪅㪉㪊㫧㪇㪅㪇㪊 z Construction Silicon epitaxial planar z Land size figure (Unit : mm) 㪇㪅㪋 㪇㪅㪊 �
Diodes PIN Diode RN142ZS z Applications High frequency switching z Features 1) Ultra small mold type. (GMD2) 2) Low high-frequency forward resistance (rF). / low capacitance (CT). z Construction Silicon epitaxial planar RN142ZS z Dimensions (Unit : mm) 0.6±0.05 0.19±0.03 0.38±0.03 0.57±0.05
Diodes PIN diode RN142V RN142V zApplications High frequency switching zExternal dimensions (Unit : mm) 1.25±0.1 0.1±0.1 0.05 zLand size figure (Unit : mm) 0.9MIN. 1.7±0.1 2.5±0.2 0.8MIN. 2.1 zFeatures 1) Small mold type. (UMD2) 2) Low high-frequency forward resistance / low cap
RN142G Diodes PIN diode RN142G zApplication High frequency switching zExternal dimensions (Units : mm) 1.0±0.05 1.4±0.05 zFeatures 1) Ultra small mold type (VMD2) 2) High frequency resistance which is small and low capacity. 0.6±0.05 0.27±0.03 CATHODE MARK 0.13±0.03 K ROHM : VMD2 EIAJ :
RN1414~RN1418 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1414,RN1415,RN1416 RN1417,RN1418 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications l With built-in bias resistors l Simplify circuit design l Reduce a quantity of parts and manufacturing process
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