RM50C1A-XXF
Mitsubishi Electric Semiconductor
HIGH SPEED SWITCHING USE INSULATED TYPEMITSUBISHI FAST RECOVERY DIODE MODULES
RM50DA/CA/C1A-XXF
HIGH SPEED SWITCHING USE
INSULATED TYPE
RM50DA/CA/C1A-XXF
DC current .................................. 50A Repetitive peak reverse voltage .. 600/800/1000/1200V • trr Reverse recovery time ........
RM50C1A-XXS
MEDIUM POWER/ HIGH FREQUENCY USE INSULATED TYPEMITSUBISHI FAST RECOVERY DIODE MODULES
RM50DA/CA/C1A-XXS
MEDIUM POWER, HIGH FREQUENCY USE
INSULATED TYPE
RM50DA/CA/C1A-XXS
DC current .................................. 50A Repetitive peak reverse voltage ...................... 300/600V • trr Reverse recovery time ............. 0.4µs • Insul
Mitsubishi Electric Semiconductor
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