RM200DA-20F
Mitsubishi Electric Semiconductor
HIGH SPEED SWITCHING USE INSULATED TYPEMITSUBISHI FAST RECOVERY DIODE MODULES
RM200DA-20F,-24F
HIGH SPEED SWITCHING USE
INSULATED TYPE
RM200DA-20F,-24F
DC current ................................ 200A Repetitive peak reverse voltage ........ 1000/1200V • trr Reverse recovery time .............
RM200DA-24F
HIGH SPEED SWITCHING USE INSULATED TYPEMITSUBISHI FAST RECOVERY DIODE MODULES
RM200DA-20F,-24F
HIGH SPEED SWITCHING USE
INSULATED TYPE
RM200DA-20F,-24F
DC current ................................ 200A Repetitive peak reverse voltage ........ 1000/1200V • trr Reverse recovery time ............. 0.8µs • Insulated Type • UL Recogn
Mitsubishi Electric Semiconductor
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