|
|
Datasheet RJU6054SDPE Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | RJU6054SDPE | Single Diode Ultra Fast Recovery Diode Preliminary Datasheet
RJU6054SDPE
Single Diode Ultra Fast Recovery Diode
Features
• Ultra fast reverse recovery time: trr = 25 ns typ. (at IF = 30 A, di/dt = 100 A/μs) • Low forward voltage: VF = 2.5 V typ. (at IF = 30 A) • Low reverse current: IR = 1 μA max. (at VR = 600 V) R07DS0384EJ0100 |  Renesas | diode |
RJU Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | RJU | Metal Oxide Resistors RJU
Vishay Dale
Metal Oxide Resistors, Special Purpose High Power, Ultra High Value
FEATURES
• Wattages to 400 watt at + 25°C • Derated to 0 at + 230°C • Voltage testing to 100KV • Tolerances: ± 1%, ± 2%, ± 5%, ± 10% • Two terminal styles, Style 3 - Tab Terminal and Style 4 Ferrule  Vishay data | | |
| 2 | RJU002N06 | 2.5V Drive Nch MOS FET
RJU002N06
Transistors
2.5V Drive Nch MOS FET
RJU002N06
zStructure Silicon N-channel MOS FET zExternal dimensions (Unit : mm)
UMT3
2.0
0.9
0.3
zFeatures 1) Low On-resistance. 2) Low voltage drive (2.5V drive).
0.2
0.7
(3)
1.25
(2) (1)
2.1
0.65 0.65 1.3
0.15
zApplicatio  ROHM Semiconductor data | | |
| 3 | RJU002N06FRA | MOSFET, Transistor 2.5V Drive Nch MOSFET
RRJJUU002N06FRA
AEC-Q101 Qualified
zStructure Silicon N-channel MOS FET
zFeatures 1) Low On-resistance. 2) Low voltage drive (2.5V drive).
zApplications Switching
zPackaging specifications
Package
Type
Code
Basic ordering unit (pieces)
RRJJUU000022NN0066FRA
Taping T1 ROHM Semiconductor mosfet | | |
| 4 | RJU003N03 | 2.5V Drive Nch MOS FET
RJU003N03
Transistors
2.5V Drive Nch MOS FET
RJU003N03
Structure Silicon N-channel MOS FET External dimensions (Unit : mm)
ËÓÌí
îòð ðòç ðòí
øí÷
Features 1) Low On-resistance. 2) Low voltage drive (2.5V drive).
ðòî
ðòé
øî÷
øï÷
ðòêë ðòêë ROHM Semiconductor data | | |
| 5 | RJU003N03FRA | 2.5V Drive Nch MOSFET 2.5V Drive Nch MOSFET
RJU003N03FRA
AEC-Q101 Qualified
zStructure Silicon N-channel MOSFET
zFeatures 1) Low On-resistance. 2) Low voltage drive (2.5V drive).
zApplications Switching
zPackaging specifications and hFE
Package
Type
Code
Basic ordering unit (pieces)
RRJJUU000033NN0033FRA
Tapin ROHM Semiconductor mosfet | | |
| 6 | RJU3051SDPE | Ultra Fast Recovery Diode Preliminary Datasheet
RJU3051SDPE
360V - 10A - Single Diode Ultra Fast Recovery Diode
Features
• Ultra fast reverse recovery time: trr = 25 ns typ. (at IF = 10 A, di/dt = 100 A/μs) • Low forward voltage: VF = 1.4 V typ. (at IF = 10 A) • Low reverse current: IR = 1 μA max. (at VR = 360 V) R0 Renesas diode | | |
| 7 | RJU3052SDPD-E0 | Ultra Fast Recovery Diode Preliminary Datasheet
RJU3052SDPD-E0
360V - 20A - Single Diode Ultra Fast Recovery Diode
Features
Ultra fast reverse recovery time: trr = 25 ns typ. (at IF = 20 A, di/dt = 100 A/s) Low forward voltage: VF = 1.4 V typ. (at IF = 20 A) Low reverse current: IR = 1 A max. (at VR = 360 Renesas diode | |
| Esta página es del resultado de búsqueda del RJU6054SDPE. Si pulsa el resultado de búsqueda de RJU6054SDPE se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin. |
nuevas actualizaciones
| Número de pieza | Descripción | Fabricantes | |
| SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
 Sanken |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Sitemap |