RJP63F3DPP-M0
Renesas
N-Channel IGBTPreliminary Datasheet
RJP63F3DPP-M0
Silicon N Channel IGBT High Speed Power Switching
Features
• • • • • Trench gate and thin wafer technology (G6H series) Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ High speed switching tf = 10