RJP60D0DPP-M0
Renesas Technology
Silicon N Channel IGBTPreliminary Datasheet
RJP60D0DPP-M0
Silicon N Channel IGBT High Speed Power Switching
Features
Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (IC = 22 A, VGE = 15 V, Ta = 25°C) Gate to