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RJP60D0DPP-M0  

Renesas Technology
Renesas Technology

RJP60D0DPP-M0

Silicon N Channel IGBT

Preliminary Datasheet RJP60D0DPP-M0 Silicon N Channel IGBT High Speed Power Switching Features  Short circuit withstand time (5 s typ.)  Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (IC = 22 A, VGE = 15 V, Ta = 25°C)  Gate to


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