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RJP60D0DPE 전자부품 데이터시트



RJP60D0DPE 전자부품 회로 및
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RJP60D0DPE  

Renesas
Renesas

RJP60D0DPE

N-Channel IGBT

Preliminary Datasheet RJP60D0DPE Silicon N Channel IGBT High Speed Power Switching Features  Short circuit withstand time (5 s typ.)  Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (IC = 22 A, VGE = 15 V, Ta = 25°C)  Gate to em




관련 부품 RJP60D0D 상세설명

RJP60D0DPP-M0  

  
Silicon N Channel IGBT

Preliminary Datasheet RJP60D0DPP-M0 Silicon N Channel IGBT High Speed Power Switching Features  Short circuit withstand time (5 s typ.)  Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (IC = 22 A, VGE = 15 V, Ta = 25°C)  Gate to emitter voltage rating 30 V  Pb-f



Renesas Technology
Renesas Technology

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RJP60D0DPM  

  
N-Channel IGBT

Preliminary Datasheet RJP60D0DPM Silicon N Channel IGBT High Speed Power Switching Features  Short circuit withstand time (5 s typ.)  Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (IC = 22 A, VGE = 15V, Ta = 25°C)  Gate to emitter voltage rating 30 V  Pb-free



Renesas
Renesas

PDF



RJP60D0DPK  

  
Silicon N Channel IGBT

Preliminary Datasheet RJP60D0DPK Silicon N Channel IGBT High Speed Power Switching Features  Short circuit withstand time (5 s typ.)  Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (IC = 22 A, VGE = 15 V, Ta = 25°C)  Gate to emitter voltage rating 30 V  Pb-free



Renesas
Renesas

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