RJP6065DPM
Renesas
N-Channel IGBTPreliminary Datasheet
RJP6065DPM
Silicon N Channel IGBT High Speed Power Switching
Features
Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (IC = 40 A, VGE = 15V, Ta = 25°C) Gate to emitter voltage rating 30 V Pb-free lead pl