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RJP30H1DPD 전자부품 데이터시트



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RJP30H1DPD  

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RJP30H1DPD

N-Channel Power MOSFET / Transistor

Preliminary Datasheet RJP30H1DPD Silicon N Channel IGBT High speed power switching Features     Trench gate and thin wafer technology (G6H-II series) High speed switching: tr = 80 ns typ., tf = 150 ns typ. Low collector to emitter saturation volta




관련 부품 RJP30H1D 상세설명

RJP30H1DPP-M0  

  
N-Channel Power MOSFET / Transistor

Preliminary Datasheet RJP30H1DPP-M0 Silicon N Channel IGBT High speed power switching Features      Trench gate and thin wafer technology (G6H-II series) High speed switching: tr =80 ns typ., tf = 150 ns typ. Low collector to emitter saturation voltage: VCE(sat)= 1.5 V typ. Low leak



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