RJP30E2DPK-M0
Renesas
N-Channel Power MOSFET / TransistorPreliminary Datasheet
RJP30E2DPK-M0
Silicon N Channel IGBT High Speed Power Switching
Features
• • • • Trench gate technology (G5H series) Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ High speed switching tf = 150 ns typ Low leak c