RJP1CS08DWT
Renesas
IGBTPreliminary Datasheet
RJP1CS08DWT/RJP1CS08DWA
1250V - 200A - IGBT Application: Inverter
Features
Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 200 A, VGE = 15 V, Ta = 25C) High speed switching Short circuit withstan
RJP1CS08DWA
IGBTPreliminary Datasheet
RJP1CS08DWT/RJP1CS08DWA
1250V - 200A - IGBT Application: Inverter
Features
Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 200 A, VGE = 15 V, Ta = 25C) High speed switching Short circuit withstands time (10 s min.) R07DS0831EJ0001 R
Renesas
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