Datasheet RJL6015DPK Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	Category
1	RJL6015DPK	Silicon N Channel MOS FET High Speed Power Switching RJL6015DPK Silicon N Channel MOS FET High Speed Power Switching Features • • • • Built-in fast recovery diode Low on-resistance Low leakage current High speed switching REJ03G1818-0100 Rev.1.00 Sep 11, 2009 Outline RENESAS Package code: PRSS0004ZE-A (Package name:TO-3P)	Renesas Technology	data

RJL Datasheet ( Hoja de datos ) - resultados coincidentes

N.º	Número de pieza	Descripción	Fabricantes	Catagory
1	RJL-001	Single 10/100 BASE-TX Filtered Connector Module NUMBER : RD-SDRJL-001 DATE :2003/08/13 -CL(REV:3) Single 10/100 BASE-TX Filtered Connector Module MODEL NO. : RJL-001 Features Fully shielded magnetics protect data from internally generated digital noise Reduces the overall length of the signal path for improved common mode pe	Taimag	connector
2	RJL5012DPE	N-Channel Power MOSFET, Transistor Preliminary Datasheet RJL5012DPE Silicon N Channel MOS FET High Speed Power Switching Features  Built-in fast recovery diode  Low on-resistance RDS(on) = 0.56  typ. (at ID = 6 A, VGS = 10 V, Ta = 25 C)  Low leakage current  High speed switching R07DS0435EJ0200 (Previous: REJ03G17	Renesas	mosfet
3	RJL5012DPP	Silicon N Channel MOS FET RJL5012DPP Silicon N Channel MOS FET High Speed Power Switching Features • Built-in fast recovery diode • Low on-resistance • Low leakage current • High speed switching Outline RENESAS Package code: PRSS0003AB-A (Package name: TO-220FN) 1 23 G Absolute Maximum Ratings Item Symbol Drai	Renesas	data
4	RJL5012DPP-M0	Silicon N Channel MOS FET RJL5012DPP-M0 Silicon N Channel MOS FET High Speed Power Switching Features • Built-in fast recovery diode • Low on-resistance RDS(on) = 0.56 Ω typ. (at ID = 6 A, VGS = 10 V, Ta = 25°C) • Low leakage current • High speed switching Outline RENESAS Package code: PRSS0003AF-A (Package name: T	Renesas	data
5	RJL5013DPE	N-Channel Power MOSFET, Transistor Preliminary Datasheet RJL5013DPE Silicon N Channel MOS FET High Speed Power Switching Features • Built-in fast recovery diode • Low on-resistance RDS(on) = 0.42 Ω typ. (at ID = 7 A, VGS = 10 V, Ta = 25°C) • Low leakage current • High speed switching R07DS0359EJ0200 (Previous: REJ03G1755-	Renesas	mosfet
6	RJL5013DPP-E0	High Speed Power Switching MOS FET RJL5013DPP-E0 500 V - 14 A - MOS FET High Speed Power Switching Features • Built-in fast recovery diode • Low on-resistance RDS(on) = 0.42 Ω typ. (at ID = 7 A, VGS = 10 V, Ta = 25°C) • Low leakage current • High speed switching Outline RENESAS Package code: PRSS0003AG-A (Package name: TO-2	Renesas	data
7	RJL5014DPK	Silicon N Channel MOS FET High Speed Power Switching RJL5014DPK Silicon N Channel MOS FET High Speed Power Switching REJ03G1798-0100 Rev.1.00 Jun 30, 2009 Features • • • • Built-in fast recovery diode Low on-resistance Low leakage current High speed switching Outline RENESAS Package code: PRSS0004ZE-A (Package name:TO-3P	Renesas Technology	data

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Número de pieza	Descripción	Fabricantes	PDF
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