Datasheet RJL5013DPE Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	RJL5013DPE	N-Channel Power MOSFET / Transistor Preliminary Datasheet RJL5013DPE Silicon N Channel MOS FET High Speed Power Switching Features • Built-in fast recovery diode • Low on-resistance RDS(on) = 0.42 Ω typ. (at ID = 7 A, VGS = 10 V, Ta = 25°C) • Low leakage current • High speed switching R07DS0359EJ0200 (Previous: REJ03G1755-	Renesas

RJL5013 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
RJL5013DPP-E0	High Speed Power Switching MOS FET RJL5013DPP-E0 500 V - 14 A - MOS FET High Speed Power Switching Features • Built-in fast recovery diode • Low on-resistance RDS(on) = 0.42 Ω typ. (at ID = 7 A, VGS = 10 V, Ta = 25°C) • Low leakage current • High speed switching Outline RENESAS Package code: PRSS0003AG-A	Renesas
RJL5013DPE	N-Channel Power MOSFET / Transistor Preliminary Datasheet RJL5013DPE Silicon N Channel MOS FET High Speed Power Switching Features • Built-in fast recovery diode • Low on-resistance RDS(on) = 0.42 Ω typ. (at ID = 7 A, VGS = 10 V, Ta = 25°C) • Low leakage current • High speed switching R07DS0359EJ0200 (P	Renesas

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