RJK6035DPP-E0
Renesas
N-Channel Power MOSFET / TransistorPreliminary Datasheet
RJK6035DPP-E0
600V - 6A - MOS FET High Speed Power Switching
Features
Low on-resistance RDS(on) = 1.1 typ. (at ID = 3 A, VGS = 10 V, Ta = 25C) Low leakage current High speed switching R07DS0616EJ0100 Rev.1.00 Feb 24, 2