RJK6026DPE
Renesas
Silicon N Channel MOS FETRJK6026DPE
Silicon N Channel MOS FET High Speed Power Switching
Features
• Low on-resistance • Low leakage current • High speed switching
Outline
RENESAS Package code: PRSS0004AE-B (Package name: LDPAK(S)-(1) )
4
123
G
Absolute Maximum Ratings
Item D
RJK6026DPP-E0
MOS FETPreliminary Datasheet
RJK6026DPP-E0
600V - 5A - MOS FET High Speed Power Switching
Features
Low on-resistance RDS(on) = 2.0 typ. (at ID = 2.5 A, VGS = 10 V, Ta = 25C) Low leakage current High speed switching R07DS0614EJ0100 Rev.1.00 Jun 21, 2012
Outline
RENESAS Package code: PRS
Renesas
PDF
RJK6026DPP
Silicon N Channel MOSFET High Speed Power SwitchingRJK6026DPP
Silicon N Channel MOS FET High Speed Power Switching
REJ03G1592-0200 Rev.2.00 Jun 04, 2008
Features
• Low on-resistance • Low leakage current • High speed switching
Outline
RENESAS Package code: PRSS0003AB-A (Package name: TO-220FN)
D
G
1. Gate 2. Drain 3. Source
1
2 3
S
Abs
Renesas Technology
PDF