RJK6024DPD
Renesas Technology
Silicon N Channel MOS FET High Speed Power SwitchingPreliminary Datasheet
RJK6024DPD
Silicon N Channel MOS FET High Speed Power Switching
Features
Low on-resistance RDS(on) = 28 typ. (at ID = 0.2 A, VGS = 10 V, Ta = 25C) Low drive current High density mounting REJ03G1936-
RJK6024DPE
N-Channel Power MOSFET / TransistorPreliminary Datasheet
RJK6024DPE
600V - 0.4A - MOS FET High Speed Power Switching
Features
Low on-resistance RDS(on) = 28 typ. (at ID = 0.2 A, VGS = 10 V, Ta = 25C) Low leakage current High speed switching R07DS0424EJ0200 Rev.2.00 Feb 27, 2012
Outline
RENESAS Package code: PRSS0
Renesas
PDF
RJK6024DP3-A0
High Speed Power Switching MOS FETRJK6024DP3-A0
600 V - 0.4 A - MOS FET High Speed Power Switching
Features
• Low on-resistance RDS(on) = 28 Ω typ. (at ID = 0.2 A, VGS = 10 V, Ta = 25°C)
• Low leakage current • High speed switching
Outline
RENESAS Package code: PRSP0004ZB-A (Package name: SOT-223)
4
3 2 1
G
Absolute Maxim
Renesas Technology
PDF