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RJK6024DPD 전자부품 데이터시트



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RJK6024DPD  

Renesas Technology
Renesas Technology

RJK6024DPD

Silicon N Channel MOS FET High Speed Power Switching

Preliminary Datasheet RJK6024DPD Silicon N Channel MOS FET High Speed Power Switching Features  Low on-resistance RDS(on) = 28  typ. (at ID = 0.2 A, VGS = 10 V, Ta = 25C)  Low drive current  High density mounting REJ03G1936-




관련 부품 RJK6024D 상세설명

RJK6024DPE  

  
N-Channel Power MOSFET / Transistor

Preliminary Datasheet RJK6024DPE 600V - 0.4A - MOS FET High Speed Power Switching Features  Low on-resistance RDS(on) = 28  typ. (at ID = 0.2 A, VGS = 10 V, Ta = 25C)  Low leakage current  High speed switching R07DS0424EJ0200 Rev.2.00 Feb 27, 2012 Outline RENESAS Package code: PRSS0



Renesas
Renesas

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RJK6024DP3-A0  

  
High Speed Power Switching MOS FET

RJK6024DP3-A0 600 V - 0.4 A - MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 28 Ω typ. (at ID = 0.2 A, VGS = 10 V, Ta = 25°C) • Low leakage current • High speed switching Outline RENESAS Package code: PRSP0004ZB-A (Package name: SOT-223) 4 3 2 1 G Absolute Maxim



Renesas Technology
Renesas Technology

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