RJK6013DPE
Renesas Technology
Silicon N Channel MOS FET High Speed Power Switching
RJK6013DPE
Silicon N Channel MOS FET High Speed Power Switching
REJ03G1535-0100 Rev.1.00 Apr 04, 2007
Features
• Low on-resistance • Low leakage current • High speed switching
Outline
RENESAS Package code: PRSS0004AE-B (Package nam
RJK6013DPP-E0
N-Channel Power MOSFET / TransistorPreliminary Datasheet
RJK6013DPP-E0
600V - 11A - MOS FET High Speed Power Switching
Features
Low on-resistance RDS(on) = 0.58 typ. (at ID = 5.5 A, VGS = 10 V, Ta = 25C) Low leakage current High speed switching R07DS0612EJ0100 Rev.1.00 Feb 20, 2012
Outline
RENESAS Package code: P
Renesas
PDF
RJK6013DPP
N-Channel Power MOSFET / TransistorRJK6013DPP
Silicon N Channel MOS FET High Speed Power Switching
REJ03G1582-0100 Rev.1.00 Sep 11, 2007
Features
• Low on-resistance • Low leakage current • High speed switching
Outline
RENESAS Package code: PRSS0003AB-A (Package name: TO-220FN)
D
G
1. Gate 2. Drain 3. Source
1
2 3
S
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Renesas
PDF