RJK6002DPH-E0
Renesas
MOS FETPreliminary Datasheet
RJK6002DPH-E0
600V - 2A - MOS FET High Speed Power Switching
Features
Low on-resistance RDS(on) = 5.7 typ. (at ID = 1 A, VGS = 10 V, Ta = 25C) Low leakage current High speed switching R07DS1047EJ0100 Rev.1.00 Mar 21, 2