RJK6002DPE
Renesas
MOS FETPreliminary Datasheet
RJK6002DPE
600V - 2A - MOS FET High Speed Power Switching
Features
Low on-resistance RDS(on) = 5.7 typ. (at ID = 1 A, VGS = 10 V, Ta = 25C) Low drive current High density mounting R07DS0214EJ0100 Rev.1.00 Jun 21, 2012
RJK6002DPH-E0
MOS FETPreliminary Datasheet
RJK6002DPH-E0
600V - 2A - MOS FET High Speed Power Switching
Features
Low on-resistance RDS(on) = 5.7 typ. (at ID = 1 A, VGS = 10 V, Ta = 25C) Low leakage current High speed switching R07DS1047EJ0100 Rev.1.00 Mar 21, 2013
Outline
RENESAS Package code: PRSS0
Renesas
PDF
RJK6002DJE
MOS FETPreliminary Datasheet
RJK6002DJE
600V - 2A - MOS FET High Speed Power Switching
Features
Low on-resistance RDS(on) = 5.7 typ. (at ID = 1 A, VGS = 10 V, Ta = 25C) Low leakage current High speed switching R07DS0845EJ0100 Rev.1.00 Jul 05, 2011
Outline
RENESAS Package code: PRSS0003
Renesas
PDF
RJK6002DPD
Silicon N Channel MOS FET High Speed Power Switching
RJK6002DPD
Silicon N Channel MOS FET High Speed Power Switching
REJ03G1483-0100 Rev.1.00 Nov 09, 2006
Features
• Low on-resistance • Low leakage current • High speed switching
Outline
RENESAS Package code: PRSS0004ZA-A (Package name : MP-3A)
4 1. 2. 3. 4. Gate Drain Sour
Renesas Technology
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