RJK5026DPP-M0
Renesas
Silicon N Channel MOS FETRJK5026DPP-M0
Silicon N Channel MOS FET High Speed Power Switching
Features
• Low on-resistance RDS(on) = 1.35 Ω typ. (at ID = 3 A, VGS = 10 V, Ta = 25°C)
• Low leakage current • High speed switching
Outline
RENESAS Package code: PRSS0003AF-A (Package
RJK5026DPP-E0
MOS FETPreliminary Datasheet
RJK5026DPP-E0
500V - 6A - MOS FET High Speed Power Switching
Features
Low on-resistance RDS(on) = 1.35 typ. (at ID = 3 A, VGS = 10 V, Ta = 25C) Low leakage current High speed switching R07DS0608EJ0100 Rev.1.00 Jun 21, 2012
Outline
RENESAS Package code: PRSS
Renesas
PDF