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RJK5012DPE  

Renesas Technology
Renesas Technology

RJK5012DPE

Silicon N Channel MOS FET High Speed Power Switching

Preliminary Datasheet RJK5012DPE Silicon N Channel MOS FET High Speed Power Switching Features  Low on-resistance RDS(on) = 0.515  typ. (at ID = 6 A, VGS = 10 V, Ta = 25 C)  Low leakage current  High speed switching REJ03G14




관련 부품 RJK5012D 상세설명

RJK5012DPP-E0  

  
MOS FET

Preliminary Datasheet RJK5012DPP-E0 500V - 12A - MOS FET High Speed Power Switching Features  Low on-resistance RDS(on) = 0.515  typ. (at ID = 6 A, VGS = 10 V, Ta = 25C)  Low leakage current  High speed switching R07DS0561EJ0100 Rev.1.00 Jun 21, 2012 Outline RENESAS Package code: PR



Renesas
Renesas

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RJK5012DPP  

  
Silicon N Channel MOS FET High Speed Power Switching

RJK5012DPP Silicon N Channel MOS FET High Speed Power Switching REJ03G1545-0100 Rev.1.00 May 10, 2007 Features • Low on-resistance • Low leakage current • High speed switching Outline RENESAS Package code: PRSS0003AB-A (Package name: TO-220FN) D G 1. Gate 2. Drain 3. S



Renesas Technology
Renesas Technology

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