RJK5012DPE
Renesas Technology
Silicon N Channel MOS FET High Speed Power SwitchingPreliminary Datasheet
RJK5012DPE
Silicon N Channel MOS FET High Speed Power Switching
Features
Low on-resistance RDS(on) = 0.515 typ. (at ID = 6 A, VGS = 10 V, Ta = 25 C) Low leakage current High speed switching REJ03G14
RJK5012DPP-E0
MOS FETPreliminary Datasheet
RJK5012DPP-E0
500V - 12A - MOS FET High Speed Power Switching
Features
Low on-resistance RDS(on) = 0.515 typ. (at ID = 6 A, VGS = 10 V, Ta = 25C) Low leakage current High speed switching R07DS0561EJ0100 Rev.1.00 Jun 21, 2012
Outline
RENESAS Package code: PR
Renesas
PDF
RJK5012DPP
Silicon N Channel MOS FET High Speed Power Switching
RJK5012DPP
Silicon N Channel MOS FET High Speed Power Switching
REJ03G1545-0100 Rev.1.00 May 10, 2007
Features
• Low on-resistance • Low leakage current • High speed switching
Outline
RENESAS Package code: PRSS0003AB-A (Package name: TO-220FN)
D
G
1. Gate 2. Drain 3. S
Renesas Technology
PDF