RJK4006DPP-M0
Renesas
High Speed Power SwitchingPreliminary Datasheet
RJK4006DPP-M0
Silicon N Channel MOS FET High Speed Power Switching
Features
Low on-resistance RDS(on) = 0.69 typ. (ID = 4 A, VGS = 10 V, Ta = 25C) Low leakage current High speed switching R07DS0228EJ0100 Rev.1.00 Dec 1