RJK1211DPA
Renesas
N-Channel Power MOSFET / TransistorPreliminary Datasheet
RJK1211DPA
Silicon N Channel Power MOS FET Power Switching
Features
High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 100 mΩ typ. (at VGS = 10 V) • Pb-free • Halogen
RJK1211DNS
N-Channel Power MOSFET / TransistorPreliminary Datasheet
RJK1211DNS
Silicon N Channel Power MOS FET Power Switching
Features
High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 100 m typ. (at VGS = 10 V) Pb-free Halogen-free R07DS0090EJ03
Renesas
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