Datasheet RJK03E2DNS Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	RJK03E2DNS	Silicon N Channel Power MOS FET Preliminary Datasheet RJK03E2DNS Silicon N Channel Power MOS FET Power Switching Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 6.9 m typ. (at VGS = 10 V)  Pb-free  Halogen-free   	Renesas Technology

RJK03E2 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
RJK03E2DNS	Silicon N Channel Power MOS FET Preliminary Datasheet RJK03E2DNS Silicon N Channel Power MOS FET Power Switching Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 6.9 m typ. (at VGS = 10 V)  Pb-free  Haloge	Renesas Technology

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Número de pieza	Descripción	Fabricantes	PDF
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