|
|
Datasheet RJK03C1DPB Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
1 | RJK03C1DPB | Silicon N Channel Power MOS FET Preliminary
RJK03C1DPB
Silicon N Channel Power MOS FET with Schottky Barrier Diode REJ03G1830-0310 Power Switching Rev.3.10
Sep 29, 2009
Features
High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 1.7 mΩ typ. (at VGS = 10 V) • Pb |
Renesas |
RJK03C1 Datasheet ( Hoja de datos ) - resultados coincidentes |
Número de pieza | Descripción | Fabricantes | |
RJK03C1DPB | Silicon N Channel Power MOS FET |
Renesas |
Esta página es del resultado de búsqueda del RJK03C1DPB. Si pulsa el resultado de búsqueda de RJK03C1DPB se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin. |
Número de pieza | Descripción | Fabricantes | |
SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
Sanken |
DataSheet.es | 2020 | Privacy Policy | Contacto | Sitemap |