RJK0396DPA
Renesas Technology
Silicon N Channel Power MOS FETPreliminary Datasheet
RJK0396DPA
Silicon N Channel Power MOS FET Power Switching
Features
High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 6.9 m typ. (at VGS = 10 V) �