RJK0393DPA
Renesas Technology
Silicon N Channel Power MOS FETPreliminary Datasheet
RJK0393DPA
Silicon N Channel Power MOS FET Power Switching
Features
High speed switching Capable of 4.5V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 3.3 m typ. (at VGS = 10 V) �