RJK0366DPA
Renesas Technology
Silicon N Channel Power MOS FET Power Switching
RJK0366DPA
Silicon N Channel Power MOS FET Power Switching
REJ03G1656-0600 Rev.6.00 Aug 05, 2008
Features
High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 8.5 mΩ typ. (
RJK0366DSP
Silicon N Channel Power MOS FET Power Switching
RJK0366DSP
Silicon N Channel Power MOS FET Power Switching
REJ03G1657-0301 Rev.3.01 Apr 24, 2008
Features
Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 9.0 mΩ typ. (at VGS = 10 V) • Pb-free • • • •
Outline
RENESAS P
Renesas Technology
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