RJK0365DPA
Renesas Technology
Silicon N Channel Power MOS FET Power Switching
RJK0365DPA
Silicon N Channel Power MOS FET Power Switching
REJ03G1655-0300 Rev.3.00 Aug 05, 2008
Features
High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 7.0 mΩ typ. (