RJK0330DPB
Renesas Technology
Silicon N Channel Power MOS FET Power Switching
RJK0330DPB
Silicon N Channel Power MOS FET Power Switching
REJ03G1639-0400 Rev.4.00 Apr 10, 2008
Features
High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 2.1 mΩ typ. (
RJK0330DPB-01
Renesas
Silicon N-Channel MOS FETRJK0330DPB-01
Silicon N Channel Power MOS FET Power Switching
Features
High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance
RDS(on) = 2.1 m typ. (at VGS = 10 V) Pb-free Haloge