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RJK0330DPB  

Renesas Technology
Renesas Technology

RJK0330DPB

Silicon N Channel Power MOS FET Power Switching

RJK0330DPB Silicon N Channel Power MOS FET Power Switching REJ03G1639-0400 Rev.4.00 Apr 10, 2008 Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 2.1 mΩ typ. (



RJK0330DPB-01  

Renesas
Renesas

RJK0330DPB-01

Silicon N-Channel MOS FET

RJK0330DPB-01 Silicon N Channel Power MOS FET Power Switching Features  High speed switching  Capable of 4.5 V gate drive  Low drive current  High density mounting  Low on-resistance RDS(on) = 2.1 m typ. (at VGS = 10 V)  Pb-free  Haloge



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