RJK0210DPA
Renesas Technology
Silicon N Channel Power MOS FET Power SwitchingPreliminary Datasheet
RJK0210DPA
Silicon N Channel Power MOS FET Power Switching
Features
Very high speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 4.5 m typ. (at VGS = 10