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RJH60D7DPM 전자부품 데이터시트



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기능 검색 결과



RJH60D7DPM  

Renesas
Renesas

RJH60D7DPM

IGBT

Preliminary Datasheet RJH60D7DPM 600V - 50A - IGBT Application: Inverter Features  Short circuit withstand time (5 s typ.)  Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25°C)  Built in fast rec




관련 부품 RJH60D7D 상세설명

RJH60D7DPQ-E0  

  
IGBT

Preliminary Datasheet RJH60D7DPQ-E0 600V - 50A - IGBT Application: Inverter Features  Short circuit withstand time (5 s typ.)  Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25°C)  Built in fast recovery diode (100 ns typ.) in one pack



Renesas
Renesas

PDF



RJH60D7DPK  

  
IGBT

Preliminary Datasheet RJH60D7DPK 600V - 50A - IGBT Application: Inverter R07DS0165EJ0400 Rev.4.00 Apr 19, 2012 Features  Short circuit withstand time (5 s typ.)  Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25°C)  Built in fast rec



Renesas Technology
Renesas Technology

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