RJH60D7DPM
Renesas
IGBTPreliminary Datasheet
RJH60D7DPM
600V - 50A - IGBT Application: Inverter
Features
Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25°C) Built in fast rec
RJH60D7DPQ-E0
IGBTPreliminary Datasheet
RJH60D7DPQ-E0
600V - 50A - IGBT Application: Inverter
Features
Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25°C) Built in fast recovery diode (100 ns typ.) in one pack
Renesas
PDF
RJH60D7DPK
IGBTPreliminary Datasheet
RJH60D7DPK
600V - 50A - IGBT Application: Inverter
R07DS0165EJ0400 Rev.4.00
Apr 19, 2012
Features
Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage
VCE(sat) = 1.6 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25°C) Built in fast rec
Renesas Technology
PDF