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Datasheet RJH60D7DPK Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes PDF
1 RJH60D7DPK   IGBT

Preliminary Datasheet RJH60D7DPK 600V - 50A - IGBT Application: Inverter R07DS0165EJ0400 Rev.4.00 Apr 19, 2012 Features  Short circuit withstand time (5 s typ.)  Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25°C)  Built in fast rec
 Renesas Technology
Renesas Technology		 datasheet RJH60D7DPK pdf

RJH60D7 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza Descripción Fabricantes PDF
RJH60D7DPQ-E0

IGBT

Preliminary Datasheet RJH60D7DPQ-E0 600V - 50A - IGBT Application: Inverter Features  Short circuit withstand time (5 s typ.)  Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25°C)  Built in fast recovery diode (100
Renesas
Renesas		 datasheet pdf - Renesas
RJH60D7DPK

IGBT

Preliminary Datasheet RJH60D7DPK 600V - 50A - IGBT Application: Inverter R07DS0165EJ0400 Rev.4.00 Apr 19, 2012 Features  Short circuit withstand time (5 s typ.)  Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25°C)
Renesas Technology
Renesas Technology		 datasheet pdf - Renesas Technology
RJH60D7DPM

IGBT

Preliminary Datasheet RJH60D7DPM 600V - 50A - IGBT Application: Inverter Features  Short circuit withstand time (5 s typ.)  Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25°C)  Built in fast recovery diode (100 ns
Renesas
Renesas		 datasheet pdf - Renesas


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Número de pieza Descripción Fabricantes PDF
SPS122

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 Sanken
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