RJH60D3DPE
Renesas Technology
Silicon N Channel IGBTRJH60D3DPE
Silicon N Channel IGBT Application: Inverter
Features
• High breakdown-voltage • Low on-voltage • Built-in diode
Preliminary
REJ03G1844-0100 Rev.1.00 Oct 14, 2009
Outline
RENESAS Package code: PRSS0004AE-B (Package name
RJH60D3DPP-M0
IGBTPreliminary Datasheet
RJH60D3DPP-M0
600V - 17A - IGBT Application: Inverter
R07DS0162EJ0400 Rev.4.00
Apr 19, 2012
Features
Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage
VCE(sat) = 1.6 V typ. (at IC = 17 A, VGE = 15 V, Ta = 25°C) Built in fast
Renesas
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