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RJH60D3DPE  

Renesas Technology
Renesas Technology

RJH60D3DPE

Silicon N Channel IGBT

RJH60D3DPE Silicon N Channel IGBT Application: Inverter Features • High breakdown-voltage • Low on-voltage • Built-in diode Preliminary REJ03G1844-0100 Rev.1.00 Oct 14, 2009 Outline RENESAS Package code: PRSS0004AE-B (Package name




관련 부품 RJH60D3D 상세설명

RJH60D3DPP-M0  

  
IGBT

Preliminary Datasheet RJH60D3DPP-M0 600V - 17A - IGBT Application: Inverter R07DS0162EJ0400 Rev.4.00 Apr 19, 2012 Features  Short circuit withstand time (5 s typ.)  Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 17 A, VGE = 15 V, Ta = 25°C)  Built in fast



Renesas
Renesas

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