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RJH60D0DPM 전자부품 데이터시트



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RJH60D0DPM  

Renesas
Renesas

RJH60D0DPM

IGBT

Preliminary Datasheet RJH60D0DPM 600V - 22A - IGBT Application: Inverter Features  Short circuit withstand time (5 s typ.)  Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 22 A, VGE = 15 V, Ta = 25°C)  Built in fast rec




관련 부품 RJH60D0D 상세설명

RJH60D0DPQ-A0  

  
IGBT

Preliminary Datasheet RJH60D0DPQ-A0 600 V - 22 A - IGBT Application: Inverter Features  Short circuit withstand time (5 s typ.)  Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 22 A, VGE = 15 V, Ta = 25°C)  Built in fast recovery diode (100 ns typ.) in one pa



Renesas
Renesas

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RJH60D0DPK  

  
Silicon N Channel IGBT

RJH60D0DPK Silicon N Channel IGBT Application: Inverter Features • High breakdown-voltage • Low on-voltage • Built-in diode Preliminary REJ03G1845-0100 Rev.1.00 Oct 14, 2009 Outline RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P) C G 1. Gate 2. Collector 3. E



Renesas Technology
Renesas Technology

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