RJH1CV6DPK
Renesas
IGBTPreliminary Datasheet
RJH1CV6DPK
1200V - 30A - IGBT Application: Inverter
Features
Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 30 A, VGE = 15 V, Ta = 25°C) Built-in fast re
RJH1CV6DPQ-E0
IGBTPreliminary Datasheet
RJH1CV6DPQ-E0
1200V - 30A - IGBT Application: Inverter
Features
Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 30 A, VGE = 15 V, Ta = 25°C) Built-in fast recovery diode (trr = 180 ns typ.) in o
Renesas
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