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RJH1CV6DPK 전자부품 데이터시트



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RJH1CV6DPK  

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RJH1CV6DPK

IGBT

Preliminary Datasheet RJH1CV6DPK 1200V - 30A - IGBT Application: Inverter Features  Short circuit withstand time (5 s typ.)  Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 30 A, VGE = 15 V, Ta = 25°C)  Built-in fast re




관련 부품 RJH1CV6D 상세설명

RJH1CV6DPQ-E0  

  
IGBT

Preliminary Datasheet RJH1CV6DPQ-E0 1200V - 30A - IGBT Application: Inverter Features  Short circuit withstand time (5 s typ.)  Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 30 A, VGE = 15 V, Ta = 25°C)  Built-in fast recovery diode (trr = 180 ns typ.) in o



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