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Data Sheet RHRP860_F085 September 2011 8A,600V Hyperfast Diodes The RHRP860_F085 is hyperfast diodes with soft recovery characteristics (trr < 30ns). It has half the recovery time of ultrafast diodes and is silicon nitride passivated ion-implanted epitaxial planar construction. This device is inte
S E M I C O N D U C T O R RHRP840, RHRP850, RHRP860 8A, 400V - 600V Hyperfast Diodes Package JEDEC TO-220AC o April 1995 Features • Hyperfast with Soft Recovery . . . . . . . . . . . . . . . . <30ns • Operating Temperature . . . . . . . . . . . . . . . . . . . .+175 C • Reverse Voltage Up T
RHRP840, RHRP860 Data Sheet January 2000 File Number 3668.2 8A, 400V - 600V Hyperfast Diodes The RHRP840 and RHRP860 are hyperfast diodes with soft recovery characteristics (trr < 30ns). They have half the recovery time of ultrafast diodes and are silicon nitride passivated ion-implanted epitaxial
RHRP840, RHRP860 Data Sheet January 2002 8A, 400V - 600V Hyperfast Diodes The RHRP840 and RHRP860 are hyperfast diodes with soft recovery characteristics (trr < 30ns). They have half the recovery time of ultrafast diodes and are silicon nitride passivated ion-implanted epitaxial planar construction
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