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Datasheet RHRD660S Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
4 | RHRD660S | Hyperfast Diodes RHRD640, RHRD650, RHRD660, S E M I C O N D U C T O R RHRD640S, RHRD650S, RHRD660S
April 1995
6A, 400V - 600V Hyperfast Diodes
Features
Package
• Hyperfast with Soft Recovery. . . . . . . . . . . . . . . . . . . . . . . . . <30ns • Operating Temperature . . . . . . . . . . . . . . . . . . . |
Harris |
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3 | RHRD660S | 6A/ 600V Hyperfast Diodes RHRD660, RHRD660S
Data Sheet January 2002
6A, 600V Hyperfast Diodes
The RHRD660 and RHRD660S are hyperfast diodes with soft recovery characteristics (trr < 30ns). They have half the recovery time of ultrafast diodes and are silicon nitride passivated ion-implanted epitaxial planar construction. The |
Fairchild Semiconductor |
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2 | RHRD660S | 6A/ 600V Hyperfast Diodes RHRD660, RHRD660S
Data Sheet January 2000 File Number 3746.3
6A, 600V Hyperfast Diodes
The RHRD660 and RHRD660S are hyperfast diodes with soft recovery characteristics (trr < 30ns). They have half the recovery time of ultrafast diodes and are silicon nitride passivated ion-implanted epitaxial plana |
Intersil Corporation |
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1 | RHRD660S9A_F085 | Hyperfast Diodes Data Sheet
RHRD660S9A_F085
May 2013
6A, 600V Hyperfast Diodes
The RHRD660S9A_F085 is hyperfast diodes with soft recovery characteristics (trr < 30ns). It has half the recovery time of ultrafast diodes and are silicon nitride passivated ion-implanted epitaxial planar construction.
This device is in |
Fairchild Semiconductor |
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Número de pieza | Descripción | Fabricantes | |
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