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Datasheet RF1S70N06 Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes Category
1RF1S70N0670A/ 60V/ Avalanche Rated/ N-Channel Enhancement-Mode Power MOSFETs

S E M I C O N D U C T O R RFG70N06, RFP70N06, RF1S70N06, RF1S70N06SM 70A, 60V, Avalanche Rated, N-Channel Enhancement-Mode Power MOSFETs Packages JEDEC STYLE TO-247 SOURCE DRAIN GATE December 1995 Features • 70A, 60V • rDS(on) = 0.014Ω • Temperature Compensated PSPICE Model • Peak Curre
Fairchild Semiconductor
Fairchild Semiconductor
mosfet
2RF1S70N06N-Channel Enhancement-Mode Power MOSFETs

SEMICONDUCTOR RFG70N06, RFP70N06, RF1S70N06, RF1S70N06SM December 1995 70A, 60V, Avalanche Rated, N-Channel Enhancement-Mode Power MOSFETs Features • 70A, 60V • rDS(on) = 0.014Ω • Temperature Compensated PSPICE Model • Peak Current vs Pulse Width Curve • UIS Rating Curve (Single Puls
Harris
Harris
mosfet
3RF1S70N06SM70A/ 60V/ Avalanche Rated/ N-Channel Enhancement-Mode Power MOSFETs

S E M I C O N D U C T O R RFG70N06, RFP70N06, RF1S70N06, RF1S70N06SM 70A, 60V, Avalanche Rated, N-Channel Enhancement-Mode Power MOSFETs Packages JEDEC STYLE TO-247 SOURCE DRAIN GATE December 1995 Features • 70A, 60V • rDS(on) = 0.014Ω • Temperature Compensated PSPICE Model • Peak Curre
Fairchild Semiconductor
Fairchild Semiconductor
mosfet
4RF1S70N06SM70A/ 60V/ 0.014 Ohm/ N-Channel Power MOSFETs

RFG70N06, RFP70N06, RF1S70N06SM Data Sheet July 1999 File Number 3206.5 70A, 60V, 0.014 Ohm, N-Channel Power MOSFETs These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silic
Intersil Corporation
Intersil Corporation
mosfet
5RF1S70N06SMN-Channel Enhancement-Mode Power MOSFETs

SEMICONDUCTOR RFG70N06, RFP70N06, RF1S70N06, RF1S70N06SM December 1995 70A, 60V, Avalanche Rated, N-Channel Enhancement-Mode Power MOSFETs Features • 70A, 60V • rDS(on) = 0.014Ω • Temperature Compensated PSPICE Model • Peak Current vs Pulse Width Curve • UIS Rating Curve (Single Puls
Harris
Harris
mosfet


RF1 Datasheet ( Hoja de datos ) - resultados coincidentes

N.º Número de pieza Descripción Fabricantes Catagory
1RF1Fast-Recovery Rectifier Diodes

Sanken electric
Sanken electric
rectifier
2RF100(RF100 / RF103) HIGH REPEATABILITY ULTRAMINIATURE CENTIGRID RELAY BROADBAND DC TO RF

TELEDYNE RELAYS HIGH REPEATABILITY ULTRAMINIATURE CENTIGRID® RELAY BROADBAND DC TO RF SERIES DESIGNATION RF100 RF103 SERIES RELAY TYPE Repeatable, RF, Centigrid® relay Sensitive, repeatable, RF, Centigrid® relay INTERNAL CONSTRUCTION PERFORMANCE FEATURES The ultraminiatur
Teledyne Technologies
Teledyne Technologies
relay
3RF100-12(RF100 / RF103) HIGH REPEATABILITY ULTRAMINIATURE CENTIGRID RELAY BROADBAND DC TO RF

TELEDYNE RELAYS HIGH REPEATABILITY ULTRAMINIATURE CENTIGRID® RELAY BROADBAND DC TO RF SERIES DESIGNATION RF100 RF103 SERIES RELAY TYPE Repeatable, RF, Centigrid® relay Sensitive, repeatable, RF, Centigrid® relay INTERNAL CONSTRUCTION PERFORMANCE FEATURES The ultraminiatur
Teledyne Technologies
Teledyne Technologies
relay
4RF100-5(RF100 / RF103) HIGH REPEATABILITY ULTRAMINIATURE CENTIGRID RELAY BROADBAND DC TO RF

TELEDYNE RELAYS HIGH REPEATABILITY ULTRAMINIATURE CENTIGRID® RELAY BROADBAND DC TO RF SERIES DESIGNATION RF100 RF103 SERIES RELAY TYPE Repeatable, RF, Centigrid® relay Sensitive, repeatable, RF, Centigrid® relay INTERNAL CONSTRUCTION PERFORMANCE FEATURES The ultraminiatur
Teledyne Technologies
Teledyne Technologies
relay
5RF1001Fast recovery Diodes

RF Diodes 1series Fast recovery Diodes (Silicon Epitaxial Planar) RF 1 series zExternal dimensions (Unit : mm) CPD 1.5 5.5 2.3 0.5 zApplications High frequency rectification zFeatures 1) Ultra low VF very fast recovery 2) Fast recovery 3) Low switching loss 4) Standard packa
ROHM Semiconductor
ROHM Semiconductor
diode
6RF1001T2Fast Recovery Diode

Fast recovery diodes RF1001T2D  Applications General rectification  Dimensions (Unit : mm) 4.5±0.3     0.1  Structure 1.2 1.3 5.0±0.2  Features 1) Cathode common type. (TO-220) 2) Ultra Low VF 3) Very fast recovery 4) Low switching loss 10.0±0.3   �
ROHM Semiconductor
ROHM Semiconductor
diode
7RF10048_ALCD_Module

RF10048-A w w a D . w S a t e e h U 4 t m o .c w w .D w t a S a e h t e U 4 .c m o w w w .D a S a t e e h U 4 t m o .c
OKAYA
OKAYA
lcd



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nuevas actualizaciones

Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

Sanken
Sanken
PDF


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