RF1S640
Fairchild Semiconductor
18A/ 200V/ 0.180 Ohm/ N-Channel Power MOSFETsIRF640, RF1S640, RF1S640SM
Data Sheet January 2002
18A, 200V, 0.180 Ohm, N-Channel Power MOSFETs
These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a
RF1S640SM
Fairchild Semiconductor
18A/ 200V/ 0.180 Ohm/ N-Channel Power MOSFETsIRF640, RF1S640, RF1S640SM
Data Sheet January 2002
18A, 200V, 0.180 Ohm, N-Channel Power MOSFETs
These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a