RF1S30N06LESM
Fairchild Semiconductor
30A 60V ESD Rated/ Avalanche Rated / Logic Level N-Channel Enhancement-Mode Power MOSFETsS E M I C O N D U C T O R
RFP30N06LE, RF1S30N06LE, RF1S30N06LESM
30A, 60V, ESD Rated, Avalanche Rated, Logic Level N-Channel Enhancement-Mode Power MOSFETs
Packages
JEDEC TO-220AB
SOURCE DRAIN GATE
July 1995
Features
• 30A, 60V • rDS(ON) = 0.047Ω •
RF1S30N06LESM
Intersil Corporation
30A/ 60V/ ESD Rated/ 0.047 Ohm/ Logic Level N-Channel Power MOSFETsRFP30N06LE, RF1S30N06LESM
Data Sheet April 1999 File Number
3629.2
30A, 60V, ESD Rated, 0.047 Ohm, Logic Level N-Channel Power MOSFETs
These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching
RF1S30N06LESM
Harris
N-Channel Enhancement-Mode Power MOSFETsRFP30N06LE, RF1S30N06LE,
SEMICONDUCTOR
RF1S30N06LESM
July 1995
30A, 60V, ESD Rated, Avalanche Rated, Logic Level N-Channel Enhancement-Mode Power MOSFETs
Features
• 30A, 60V
• rDS(ON) = 0.047Ω • 2kV ESD Protected
• Temperature Compensating PSPIC