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RF1K49092 Data Sheet August 1999 File Number 3968.5 3.5A/2.5A, 12V, 0.050/0.130 Ohm, Logic Level, Complementary LittleFET™ Power MOSFET This complementary power MOSFET is manufactured using an advanced MegaFET process. This process, which uses feature sizes approaching those of LSI integrated cir
RF1K49092 Data Sheet January 2002 3.5A/2.5A, 12V, 0.050/0.130 Ohm, Logic Level, Complementary LittleFET™ Power MOSFET This complementary power MOSFET is manufactured using an advanced MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optim
RF1K49090 Data Sheet January 2002 3.5A, 12V, 0.050 Ohm, Logic Level, Dual N-Channel LittleFET™ Power MOSFET This Dual N-Channel power MOSFET is manufactured using an advanced MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utiliz
RF1K49088 Data Sheet August 1999 File Number 3952.5 3.5A, 30V, 0.06 Ohm, Logic Level, Dual N-Channel LittleFET™ Power MOSFET This Dual N-Channel power MOSFET is manufactured using an advanced MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, giv
S E M I C O N D U C T O R RF1K49088 Description The RF1K49088 Dual N-Channel power MOSFET is manufactured using an advanced MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performanc
RF1K49086 Data Sheet August 1999 File Number 3986.5 3.5A, 30V, 0.06 Ohm, Dual N-Channel LittleFET™ Power MOSFET This Dual N-Channel power MOSFET is manufactured using an advanced MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum ut
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